Name
Abstract | ||
|---|---|---|
A voltage controlled resistor (VCR) has been realized by two active devices. Field effect transistors (JFET's or MOSFET's) operating in both the ohmic and the saturation region, or bipolar junction transistors (BJT's) operating in both the saturation and the active region can be used as these devices. A new procedure is applied-a resistive mirror method. Involving the concepts of the resistive original and its resistive image is presumed by this method. Resistive image resistance is controlled by varying the resistive original resistance. Resistance range, for a given control voltage range, can be tuned by varying a voltage reference. Dynamic range corresponds to drain-to-source (collector-to-emitter) breakdown voltage of the devices used. The resulting resistance is directly proportional to the control voltage over the entire dynamic range, and it is independent of the process parameters of the used FET's (BJT's) |
Year | DOI | Venue |
|---|---|---|
1998 | 10.1109/19.744210 | Instrumentation and Measurement, IEEE Transactions |
Keywords | Field | DocType |
JFET circuits,MOSFET circuits,RC circuits,bipolar transistor circuits,current mirrors,operational amplifiers,resistors,JFET,MOSFET,active region,bipolar junction transistor,control voltage,drain-to-source breakdown voltage,dynamic range,generalized active devices,linear properties,ohmic region,op amp,resistive image resistance,resistive mirror method,resistive mirror-based voltage controlled resistor,resistive original resistance,saturation region | JFET,Current mirror,Resistive touchscreen,Field-effect transistor,Voltage reference,Electronic engineering,Breakdown voltage,Resistor,Bipolar junction transistor,Electrical engineering,Mathematics | Journal |
Volume | Issue | ISSN |
47 | 2 | 0018-9456 |
Citations | PageRank | References |
3 | 1.05 | 1 |
Authors | ||
1 | ||