Name
Abstract | ||
|---|---|---|
A charge pump circuit has been developed. It can give high voltage pulses for on-chip programming EEPROM. The charge pump circuit uses a symmetrical structure and is designed to offer two possible output voltages, power supply or alternatively triple power supply, which is needed for the memory cells we use. The circuit has been realized in a 1.2 μm CMOS process and the measure results and discussions have been given |
Year | DOI | Venue |
|---|---|---|
1999 | 10.1109/ICECS.1999.812291 | Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference |
Keywords | DocType | Volume |
cmos analogue integrated circuits,eprom,pld programming,analogue storage,convertors,voltage multipliers,1.2 micron,cmos process,analog nonvolatile memories,analogue eeprom,charge pump circuit,high voltage pulses,integrated voltage-to-voltage converter,memory cells,multivalue voltage-to-voltage converter,onchip eeprom programming,onchip voltage generator,symmetrical structure,charge pump,cmos technology,chip,nonvolatile memory,high voltage,voltage,circuits | Conference | 1 |
ISBN | Citations | PageRank |
0-7803-5682-9 | 1 | 0.91 |
References | Authors | |
1 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ming Zhang | 1 | 15 | 2.80 |
| Nicolas Llaser | 2 | 16 | 8.11 |
| Devos, F. | 3 | 1 | 0.91 |