Paper Info
Title
A voltage-controlled resistor in CMOS technology using bisection of the voltage range
Abstract
A voltage-controlled, linear, nongrounded resistor in CMOS technology is presented. It is based on the conversion of the transconductance of the MOSFET in the saturated region to the drain-to-source resistance of the MOSFET in the nonsaturated region. A new approach to the realization of the known linearization technique is applied. Bisection of the input voltage of the controlled resistor is involved in this technique. Simulation results have shown a linearity error less than 0.58% of full scale in the 0 V to 7 V input voltage range
Year
DOI
Venue
2001
10.1109/19.982971
Instrumentation and Measurement, IEEE Transactions
Keywords
Field
DocType
CMOS analogue integrated circuits,MOSFET drain-to-source resistance,variable resistor,bisection of voltage range,voltage range bisection,linearisation techniques,linear non-grounded resistor,mosfet transconductance,linear nongrounded resistor,voltage followers,voltage controlled resistor,operational amplifiers,mosfet transconductance conversion,current controlled resistor,cmos analogue integrated circuits,linearity error,low linearity error,CMOS technology,nonsaturated region,resistive voltage divider,MOSFET transconductance conversion,voltage follower,voltage-controlled resistor,spice,active networks,drain-to-source resistance,input voltage bisection,transconductance-to-resistance conversion,voltage dividers,cmos technology,0 to 7 v,linearization technique,current-mode circuits,saturated region,0 to 7 V,resistors
Voltage,Electronic engineering,CMOS,Resistor,Transconductance,Electronic circuit,MOSFET,Mathematics,Operational amplifier,Voltage divider
Journal
Volume
Issue
ISSN
50
6
0018-9456
ISBN
Citations 
PageRank 
0-7803-5890-2
11
1.84
References 
Authors
4
2
Name
Order
Citations
PageRank
N. Tadic1236.09
Gobovic, D.2244.70