Name
Abstract | ||
|---|---|---|
The most significant sources of nonlinearity in the MOS resistive circuit behaviour are identified and deeply analysed in this contribution. Their influence on the MRC performance and, therefore, in the circuits containing such structure is evidenced through some examples and evaluated. Some reasonable hints about the way to minimise their undesired effects are provided |
Year | DOI | Venue |
|---|---|---|
2000 | 10.1109/ISCAS.2000.857046 | ISCAS |
Keywords | Field | DocType |
mosfet circuits,circuit tuning,nonlinear network analysis,mos resistive circuit,mrc,nonlinear model,undesired effects,degradation,operational amplifiers,voltage,circuit topology,resistors,linearity | Nonlinear network analysis,Nonlinear system,Resistive touchscreen,Computer science,Control theory,Electronic engineering,Mosfet circuits,Electronic circuit,Electrical engineering,Nonlinear model,Equivalent circuit | Conference |
Volume | ISBN | Citations |
1 | 0-7803-5482-6 | 1 |
PageRank | References | Authors |
0.86 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| enrique vidal | 1 | 1 | 0.86 |
| s porta | 2 | 3 | 2.31 |
| h martinez | 3 | 1 | 0.86 |
| Eduard Alarcón | 4 | 391 | 64.43 |
| Alberto Poveda | 5 | 49 | 15.30 |