Abstract | ||
---|---|---|
A thyristor-based memory cell technology provides SRAM-like performance at 2times to 3times the density of conventional 6T SRAM. The technology is readily embedded into conventional nano-scale CMOS and scales into future SOI and FinFET technologies. A 19mm2 0.13mum 9Mb SOI test chip has a 0.562mum2 cell with a cell-R/W time <2ns |
Year | DOI | Venue |
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2006 | 10.1109/ISSCC.2006.1696327 | San Francisco, CA |
Keywords | DocType | ISSN |
cmos memory circuits,sram chips,nanoelectronics,thyristors,0.13 micron,9 mbyte,finfet technologies,soi test chip,sram-like performance,nanoscale cmos,thyristor-based volatile memory,chip | Conference | 0193-6530 |
ISBN | Citations | PageRank |
1-4244-0079-1 | 0 | 0.34 |
References | Authors | |
2 | 8 |
Name | Order | Citations | PageRank |
---|---|---|---|
rabindra k roy | 1 | 0 | 0.34 |
farid nemati | 2 | 0 | 0.34 |
k young | 3 | 0 | 0.34 |
bruce bateman | 4 | 0 | 0.34 |
r chopra | 5 | 0 | 0.34 |
Seong-ook Jung | 6 | 332 | 53.74 |
chiming show | 7 | 0 | 0.34 |
hyunjin cho | 8 | 0 | 0.34 |