Name
Abstract | ||
|---|---|---|
A thyristor-based memory cell technology provides SRAM-like performance at 2times to 3times the density of conventional 6T SRAM. The technology is readily embedded into conventional nano-scale CMOS and scales into future SOI and FinFET technologies. A 19mm2 0.13mum 9Mb SOI test chip has a 0.562mum2 cell with a cell-R/W time <2ns |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1109/ISSCC.2006.1696327 | San Francisco, CA |
Keywords | DocType | ISSN |
cmos memory circuits,sram chips,nanoelectronics,thyristors,0.13 micron,9 mbyte,finfet technologies,soi test chip,sram-like performance,nanoscale cmos,thyristor-based volatile memory,chip | Conference | 0193-6530 |
ISBN | Citations | PageRank |
1-4244-0079-1 | 0 | 0.34 |
References | Authors | |
2 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| rabindra k roy | 1 | 0 | 0.34 |
| farid nemati | 2 | 0 | 0.34 |
| k young | 3 | 0 | 0.34 |
| bruce bateman | 4 | 0 | 0.34 |
| r chopra | 5 | 0 | 0.34 |
| Seong-ook Jung | 6 | 332 | 53.74 |
| chiming show | 7 | 0 | 0.34 |
| hyunjin cho | 8 | 0 | 0.34 |