Title
CMOS Image Sensors With Self-Powered Generation Capability
Abstract
Considerations for CMOS image sensors with self-power generation capability design are presented. Design of CMOS imagers, utilizing self-powered sensors (SPS) is a new approach for ultra low-power CMOS active pixel sensors (APS) implementations. The SPS architecture allows generation of electric power by employing a light sensitive device, located on the same silicon die with an APS and thus reduces power dissipation from the conventional power supply. A detailed analysis of the SPS structure is carried out, with respect to power dissipation requirements, sensor area and power generation efficiency, showing advantages and drawbacks of the proposed concept. An illustrative example of CMOS imager with self-power generation capability in 0.18-mum standard CMOS technology is discussed. Measurements from a test chip, implemented in 0.18-mum CMOS process, are presented
Year
DOI
Venue
2006
10.1109/TCSII.2006.882858
Circuits and Systems II: Express Briefs, IEEE Transactions
Keywords
Field
DocType
CMOS image sensors,low-power electronics,optical sensors,0.18 micron,CMOS active pixel sensors,CMOS image sensors,CMOS imagers,electric power generation,light sensitive device,power generated photodiode,self-powered generation capability,self-powered sensors,Active pixel sensor (APS),low-power sensor,power generated photo diode (PGPd),self-powered sensor (SPS)
Electric power,Image sensor,CMOS,Chip,CMOS sensor,Electronic engineering,Engineering,Die (integrated circuit),Electrical engineering,Electricity generation,Low-power electronics
Journal
Volume
Issue
ISSN
53
11
1549-7747
Citations 
PageRank 
References 
16
1.86
5
Authors
3
Name
Order
Citations
PageRank
Alexander Fish112321.24
Hamami, S.2162.20
Orly Yadid-Pecht323035.79