Name
Title | ||
|---|---|---|
A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation |
Abstract | ||
|---|---|---|
A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectively. The write throughput was 0.5 MB/s with internal times2 write and can be increased to ~2.67 MB/s with times16 write. Endurance and retention characteristics are measured to be 107 cycles and ten years at 99 degC |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/JSSC.2006.888349 | Solid-State Circuits, IEEE Journal of |
Keywords | DocType | Volume |
phase changing circuits,random-access storage,0.1 micron,0.5 Mbit/s,1.8 V,10 ns,2.67 Mbits/s,256 MBytes,62 ns,66 MHz,99 C,PRAM,charge pump system,phase-change random access memory,synchronous burst-read operation,Burst-read,charge pump,endurance,phase-change memory,phase-change random access memory (PRAM),reset,retention | Journal | 42 |
Issue | ISSN | Citations |
1 | 0018-9200 | 10 |
PageRank | References | Authors |
0.57 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sangbeom Kang | 1 | 67 | 27.96 |
| Woo Yeong Cho | 2 | 29 | 12.87 |
| Beak-Hyung Cho | 3 | 103 | 32.97 |
| Kwang-jin Lee | 4 | 191 | 27.94 |