Title
3D Capacitive Interconnections for High Speed Interchip Communication
Abstract
A 3D interconnection scheme based on capacitive coupling for high speed chip to chip communication has been implemented in a 0.13 mum CMOS process. This paper provides detailed design example for both synchronous and asynchronous transmitter and receiver circuits. The first approach shows with electrodes 15 times 15 mum2 a wide range of operating frequency up to 900 MHz with an energy consumption of 41fJ/bit. In the asynchronous scheme we demonstrate with electrodes 8 times 8 mum2 a vertical propagation of clock at 1.7 GHz and a propagation delay of 420 ps for general purpose signal with energy consumption of 80 f J/bit. Functionality and performance have been demonstrated by using both die-level and wafer-level assembly flows and BER measurements show the reliability of these AC interconnections with no error on more than 1013 bits transmitted.
Year
DOI
Venue
2007
10.1109/CICC.2007.4405670
San Jose, CA
Keywords
Field
DocType
CMOS integrated circuits,error statistics,integrated circuit interconnections,integrated circuit reliability,3D capacitive interconnections,AC interconnections reliability,BER measurements,CMOS process,asynchronous receiver circuits,asynchronous transmitter circuits,capacitive coupling,frequency 1.7 GHz,frequency 900 MHz,high speed chip-to-chip communication,high speed interchip communication,size 0.13 mum,synchronous receiver circuits,synchronous transmitter circuits,wafer-level assembly flows
Asynchronous communication,Transmitter,Propagation delay,Computer science,CMOS,Chip,Capacitive sensing,Electronic engineering,Electrical engineering,Energy consumption,Capacitive coupling
Conference
ISBN
Citations 
PageRank 
978-1-4244-1623-3
0
0.34
References 
Authors
6
4
Name
Order
Citations
PageRank
R. Canegallo142.14
A. Fazzi2948.38
Ciccarelli, L.3283.60
Magagni, L.4212.01