Title
High speed single-ended pseudo differential current sense amplifier for SRAM cell
Abstract
With reducing feature sizes, SRAM stability has become a major concern for future technologies. This critical issue can be solved by using highly stable separate bit-line read SRAM cell, but access time improvement becomes critical, since differential sense amplifier cannot be used for single bit-line read operation. In this paper, a novel pseudo differential single ended current mode sense amplifier is proposed. We demonstrate that this design can deliver a performance similar to that of conventional current mode differential amplifier without using dual bit-line for read operation. The overall read operation delay of the proposed single-ended design is almost 60% less than conventional single-ended design in 90 nm CMOS technology. The proposed design consumes 51.6% less energy than conventional design counterpart.
Year
DOI
Venue
2008
10.1109/ISCAS.2008.4542171
Seattle, WA
Keywords
Field
DocType
CMOS integrated circuits,SRAM chips,differential amplifiers,CMOS technology,SRAM cell,current sense amplifier,high speed amplifier,single-ended pseudo differential amplifier
Current-feedback operational amplifier,Sense amplifier,Fully differential amplifier,Computer science,Direct-coupled amplifier,Operational transconductance amplifier,Electronic engineering,Linear amplifier,Current sense amplifier,Electrical engineering,Operational amplifier
Conference
ISSN
ISBN
Citations 
0271-4302
978-1-4244-1684-4
2
PageRank 
References 
Authors
0.46
5
4
Name
Order
Citations
PageRank
Abhijit Sil120.46
Eswar Prasad Kolli220.46
Soumik Ghosh3635.17
Magdy A. Bayoumi4803122.04