Paper Info
Title
A 65nm CMOS comparator with modified latch to achieve 7GHz/1.3mW at 1.2V and 700MHz/47µW at 0.6V
Abstract
Clocked regenerative comparators, which use positive feedback of a latch to force a fast decision, are used for many applications. In a 10 GHz 3-stage comparator in 1.2 V 0.11 mum CMOS is presented and is designed to extract every 4th bit of a 40 Gb/s data stream. A BER<1012 for 1 Vpp at the input is achieved. Depending of the intended application, the constant tail current and the low-voltage swing of the CML blocks may or may not be beneficial. In a latch-type sense amplifier (in 1.5V 0.13 mum CMOS) for use in SRAMs is investigated. The delay time is 119 ps for an input voltage difference of 100 mV. A disadvantage is that for proper operation a sufficiently large supply voltage is needed due to the stack of transistors and therefore the comparison time is longer than 11 ns at 0.7 V In a comparator with similar circuit structure in 1.8 V 0.18 mum CMOS is described, consuming 350 muW at 1.4 GHz. The standard deviation of the offset without compensation is delta=31.6 mV. The sense-amplifier presented (1.2V 90nm CMOS, 225 muW @ 2GHz) also consists of a typical latch with two cross-coupled CMOS inverters. The comparator (1.5V 0.12 mum CMOS, low-threshold transistors) reaches a sensitivity (BER=10-9) of 16.5 mV @ 4 GHz/1.5 V and 25.8 mV @ 500 MHz/0.5 V. The design of the latch still needs static current and so 2.65 mW is needed at 6 GHz/1.5 V.
Year
DOI
Venue
2009
10.1109/ISSCC.2009.4977441
San Francisco, CA
Keywords
Field
DocType
CMOS integrated circuits,MMIC amplifiers,SRAM chips,comparators (circuits),delays,error statistics,CMOS comparator,SRAM,bit rate 40 Gbit/s,clocked regenerative comparators,cross-coupled CMOS inverter,delay time,frequency 1.4 GHz,frequency 4 GHz,frequency 500 MHz,frequency 6 GHz,frequency 7 GHz,frequency 700 MHz,latch-type sense amplifier,low-voltage swing,power 1.3 mW,power 2.65 mW,power 350 muW,power 47 muW,size 0.11 mum,size 0.18 mum,size 65 nm,time 119 ps,transistor,voltage 0.5 V,voltage 0.6 V,voltage 0.7 V,voltage 1.2 V,voltage 1.5 V,voltage 1.8 V,voltage 100 mV,voltage 16.5 mV,voltage 25.8 mV,voltage 31.6 mV
Sense amplifier,Comparator,Computer science,Voltage,Static random-access memory,Electronic engineering,CMOS,Comparator applications,Transistor,Electrical engineering,Bit error rate
Conference
ISBN
Citations 
PageRank 
978-1-4244-3458-9
11
1.16
References 
Authors
6
2
Name
Order
Citations
PageRank
Bernhard Goll1111.16
Horst Zimmermann2206.92