Paper Info
Title
A CMOS IQ direct digital RF modulator with embedded RF FIR-based quantization noise filter
Abstract
This paper presents a new approach to reduce the out of band quantization noise of Direct Digital RF Modulators (DDRM). The DDRM is organized in a FIR-like configuration to filter the quantization noise in the RX band directly at RF. To demonstrate the principle, a 0.9 GHz FIR IQ DDRM has been integrated in 130 nm CMOS. The transmitter achieves more than 22 dB reduction in the quantization noise floor to reach -152 dBc/Hz@20 MHz with a 200 kHz baseband tone. The actual DDRM is capable of both amplitude and phase modulation by using a new four-phases IQ architecture. This results in a reduced power consumption and chip area. The transmitter consumes 94 mW from a 2.7 V supply and achieves an average output power of 9.5 dBm. Leakage into the adjacent channel and into the next one of -35 dB and -53 dB, respectively have been measured for a 10 MHz OFDM signal. It also achieves -27.2 dB EVM with a 64QAM input signal.
Year
DOI
Venue
2011
10.1109/ESSCIRC.2011.6044884
ESSCIRC
Keywords
Field
DocType
CMOS integrated circuits,OFDM modulation,modulators,64QAM input signal,CMOS IQ direct digital RF modulator,FIR IQ DDRM,FIR-like configuration,OFDM signal,RX band,band quantization noise,chip area,direct digital RF modulators,embedded RF FIR-based quantization noise filter,four-phases IQ architecture,frequency 0.9 GHz,frequency 200 kHz,phase modulation,power 94 mW,power consumption,quantization noise floor,size 130 nm,voltage 2.7 V
Transmitter,Baseband,Quadrature amplitude modulation,RF modulator,Adjacent channel,Computer science,CMOS,Electronic engineering,Quantization (signal processing),Electrical engineering,Orthogonal frequency-division multiplexing
Conference
ISSN
ISBN
Citations 
1930-8833 E-ISBN : 978-1-4577-0702-5
978-1-4577-0702-5
12
PageRank 
References 
Authors
0.91
6
4
Name
Order
Citations
PageRank
Wagdy M. Gaber1151.77
Piet Wambacq252996.10
Jan Craninckx3756181.43
Mark Ingels415726.53