Name
Abstract | ||
|---|---|---|
This paper presents a novel memory cell consisting of a memristor and ambipolar transistors. Macroscopic models are utilized to characterize the operations of this memory cell. A detailed treatment of the two basic memory operations (write and read) with respect to memristor features is provided; particular, emphasis is devoted to the threshold characterization of the memristance and the on/off states. Extensive simulation results are provided to assess performance in terms of the write/read times, transistor scaling and power dissipation. The simulation results show that the proposed memory cell achieves superior performance compared with other memristor-based cells found in the technical literature. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1109/ICCD.2011.6081390 | Computer Design |
Keywords | Field | DocType |
MOSFET,memristors,random-access storage,semiconductor device models,MOSFET,RAM,ambipolar operation,ambipolar transistors,macroscopic model,memristance,memristor-based memory cell simulation,on-off states,power dissipation,threshold characterization,transistor scaling,write-read times,Ambipolar Transistor,Emerging Technology,Memory Cell,Memristor | Logic gate,Memristor,Computer science,CMOS,Electronic engineering,Memistor,Transistor,MOSFET,Electrical engineering,Resistive random-access memory,Memory cell | Conference |
ISSN | ISBN | Citations |
1063-6404 | 978-1-4577-1953-0 | 1 |
PageRank | References | Authors |
0.69 | 2 | 2 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Pilin Junsangsri | 1 | 28 | 5.78 |
| Fabrizio Lombardi | 2 | 1985 | 259.25 |