Title
An impedance modulated class-E polar amplifier in 90 nm CMOS
Abstract
This paper presents a digital amplitude modulator for a polar transmitter. The instantaneous output power is modulated by adjusting the amplifier's load through a digitally controlled impedance transformation network. The modulator is suited for modulation schemes with moderate peak-to-average power ratio (PAPR), such as π/4 DQPSK. The modulator may also be used for fine gain control in constant envelope modulation schemes. A class E amplifier with digital impedance amplitude modulation is integrated in 90nm CMOS. It achieves a peak output power of 9dBm with a PAE of 30% when powered from a 1.2V supply. The measured EVM is 2.6% for a 6dBm π/4 DQPSK modulated signal with 2Mb/s signal rate at 2.4GHz RF frequency.
Year
DOI
Venue
2011
10.1109/ASSCC.2011.6123567
A-SSCC
Keywords
Field
DocType
cmos digital integrated circuits,amplifiers,modulators,cmos,dqpsk-modulated signal,evm,pae,papr,constant envelope modulation schemes,digital amplitude modulator,digital impedance amplitude modulation,digitally-controlled impedance transformation network,fine gain control,frequency 2.4 ghz,impedance modulated class-e polar amplifier,peak-to-average power ratio,polar transmitter,size 90 nm,voltage 1.2 v,switched capacitor,power generation,power amplifier,gain control,switches,modulation,impedance,capacitors,cmos integrated circuits,digital controller
Computer science,CMOS,Modulation,Electrical impedance,Electronic engineering,Amplitude modulation,RF power amplifier,Automatic gain control,Electrical engineering,Amplifier,Phase-shift keying
Conference
ISBN
Citations 
PageRank 
978-1-4577-1784-0
1
0.45
References 
Authors
3
5
Name
Order
Citations
PageRank
Mark Ingels115726.53
V. Chironi2153.96
Björn Debaillie312419.27
A. Baschirotto417654.55
Jan Craninckx5756181.43