Paper Info
Title
Quaternary 1T-2MTJ Cell Circuit for a High-Density and a High-Throughput Nonvolatile Bit-Serial CAM
Abstract
A compact quaternary cell circuit using a single MOS transistor and two magnetic tunnel junction devices (1T-2MTJ) is proposed for a high-density nonvolatile bit-serial content-addressable memory (CAM). The use of quaternary CAM-cell structure makes the search-cycle counts half, which achieves a high-speed search operation. Moreover, the power supply of a CAM word circuit is cut off whenever a mismatched cell is detected during search operation, which greatly reduces the static power dissipation. In fact, the average activation ratio of a 128-bit CAM word circuit is about 2.05 percent. The efficiency of the proposed CAM-cell structure is discussed in comparison with a conventional binary CAM-cell structure under a 0.14 um CMOS/MTJ technology.
Year
DOI
Venue
2012
10.1109/ISMVL.2012.67
Multiple-Valued Logic
Keywords
Field
DocType
MOS memory circuits,content-addressable storage,magnetic storage,magnetic tunnelling,CAM cell structure,CAM word circuit,compact quaternary cell circuit,high density nonvolatile bit-serial CAM,high throughput nonvolatile bit-serial CAM,magnetic tunnel junction devices,nonvolatile bit-serial content-addressable memory,quaternary 1T-2MTJ cell circuit,quaternary CAM-cell structure,single MOS transistor,Compact,Fine-Grain,Logic-in-Memory,Low-Power,MOS/MTJ-hybrid,MTJ,Magnetic Tunnel Junction,Power Gating,Spintronics
Computer-aided manufacturing,Computer science,Dissipation,CMOS,Electronic engineering,Power gating,Non-volatile memory,Tunnel magnetoresistance,Transistor,Electrical engineering,Magnetic storage
Conference
ISSN
ISBN
Citations 
0195-623X
978-1-4673-0908-0
2
PageRank 
References 
Authors
0.40
5
2
Name
Order
Citations
PageRank
Shoun Matsunaga120.40
Takahiro Hanyu231.09