Name
Title | ||
|---|---|---|
Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component |
Abstract | ||
|---|---|---|
Channel hot-carrier (CHC) degradation in p-channel MOSFETs essentially includes negative bias temperature instabilities (NBTI), which would lead to over-estimate the CHC degradation. Therefore, a separation of the BTI component from CHC degradation is necessary to predict device lifetime more accurately. In this study, a simple lifetime prediction method separating NBTI and CHC component from sequential CHC test (i.e. alternate stress and relax) data is proposed, focusing on the recovery phenomenon, which is a distinctive behavior of NBTI. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/ICICDT.2012.6232842 | ICICDT |
Keywords | Field | DocType |
mosfet,hot carriers,life testing,thermal stability,nbti component,channel hot carrier degradation,device lifetime,lifetime prediction,negative bias temperature instabilities,p-channel mosfets,pmosfets,channel hot carrier,lifetime,nbti,recovery,reliability,pmosfet,negative bias temperature instability,logic gates,stress,degradation,logic gate | Logic gate,Hot carrier degradation,Communication channel,Electronic engineering,Degradation (geology),Engineering,MOSFET | Conference |
ISSN | ISBN | Citations |
pending E-ISBN : 978-1-4673-0144-2 | 978-1-4673-0144-2 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yasunori Mitani | 1 | 4 | 5.96 |
| Fukatsu, S. | 2 | 0 | 0.34 |
| Hagishima, D. | 3 | 0 | 0.34 |
| Kazuya Matsuzawa | 4 | 7 | 3.18 |