Paper Info
Title
122 GHz low-noise-amplifier in sige technology
Abstract
The paper presents two types of 122 GHz low-noise-amplifiers (LNA) fabricated in SiGe BiCMOS technology. The amplifier design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifiers are designed for high gain, minimum noise figure and low power consumption. Measurements show a gain of 13.5 dB and a noise figure of 9.6 dB at 122 GHz. The power consumption is 52 mW from a 3.5 Volt supply. The other version of the LNA with transformer coupling to the output instead of capacitive coupling has slightly lower gain. The amplifier is intended for the use in ISM-band radar and communication systems, wide-band communication systems and in radar imaging systems.
Year
DOI
Venue
2009
10.1109/ESSCIRC.2009.5325945
Athens
Keywords
DocType
ISSN
bicmos integrated circuits,ge-si alloys,field effect mimic,low noise amplifiers,low-power electronics,millimetre wave amplifiers,transmission lines,bicmos technology,ism-band communication system,ism-band radar,lna fabrication,mmic,sige,capacitive coupling,frequency 122 ghz,gain 13.5 db,low-noise-amplifier,noise figure 9.6 db,power 52 mw,radar imaging system,transformer coupling,transmission line structure,two-stage cascode topology,voltage 3.5 v,wide-band communication,low noise amplifier,noise figure,communication system,transmission line,radar imaging,impedance matching,input output,gain,power transmission lines,low power electronics
Conference
1930-8833
ISBN
Citations 
PageRank 
978-1-4244-4354-3
1
0.46
References 
Authors
0
8
Name
Order
Citations
PageRank
w winkler110.46
w debski210.46
bernd heinemann310.46
f korndorfer410.46
Holger Rücker5113.28
Klaus Schmalz6195.52
ch scheytt710.46
bernd tillack873.22