Paper Info
Title
Backside-illumination 14µm-pixel QVGA time-of-flight CMOS imager
Abstract
This paper presents a BSI(backside-illumination) 14μm-pixel QVGA CMOS image sensor SOC(System On a Chip) measuring TOF(Time-Of-Flight) by 20MHz-intensity modulation of 850nm-wavelength light. The 34% of overall QE(Quantum Efficiency) at 850nm-wavelength is acquired by BSI structure and optimized micro-lens. The DE(Depth Error) less than 1.5% within 6m is achieved with imaging lens of f/1.2 and LED array of which the optical intensity is 0.6W/m2 at 1m-distance. Additionally, the depth linearity is measured as that the coefficient of determination is equal to 0.9999. In order to operate under background light illumination on a scene, dual CG(Conversion Gain) scheme is implemented in each pixel.
Year
DOI
Venue
2012
10.1109/NEWCAS.2012.6329022
NEWCAS
Keywords
Field
DocType
cmos image sensors,intensity modulation,light emitting diodes,lighting,microlenses,optical modulation,sensor arrays,spatial variables measurement,system-on-chip,bsi structure,cg scheme,de,led array,qe,soc,tof measurement,backside-illumination qvga time-of-flight cmos imager,coefficient of determination,conversion gain scheme,depth error,depth linearity measurement,distance 1 m,efficiency 34 percent,frequency 20 mhz,imaging lens,microlens optimization,optical intensity,quantum efficiency,size 6 m,system on a chip,wavelength 850 nm,optical imaging,demodulation,system on chip
Quantum efficiency,Intensity modulation,Image sensor,Linearity,Optics,CMOS,Pixel,Light-emitting diode,Back-illuminated sensor,Optoelectronics,Physics
Conference
ISBN
Citations 
PageRank 
978-1-4673-0858-8
0
0.34
References 
Authors
1
12
Name
Order
Citations
PageRank
min seok oh100.34
hae kyung kong200.68
Seung-Hwan Lee37718.94
Kihwan Kim440928.22
Kwanghyuk Bae515414.07
moo sup lim600.34
Jung Chak Ahn701.01
taechan kim834.46
goto hiroshige910.69
s h kim1000.34
Dongki Min1101.35
y j lee1200.34