Title
A CMOS IQ Digital Doherty Transmitter using modulated tuning capacitors
Abstract
This paper presents a new approach to increase the output power and to enhance the drain efficiency of Direct Digital RF Modulators (DDRM). Two differential four-phase DDRMs are organized in a Doherty-like configuration using two different transformers. The modulated tuning capacitors concept is proposed to achieve a high efficiency at maximum output power and at back-off. To demonstrate this principle, a 2 GHz IQ Digital Doherty Transmitter with on-chip transformers has been integrated in 90 nm CMOS Technology. The digital IQ transmitter achieves a maximum output power of 24.8 dBm with 26% drain efficiency and 26% drain efficiency at 6 dB back-off. With a 10 MHz RFBW multi-tone OFDM signal, the transmitter consumes 176 mA from a 2.4 V supply. It achieves 18.8 dBm RMS output power with 18% average drain efficiency.
Year
DOI
Venue
2012
10.1109/ESSCIRC.2012.6341324
ESSCIRC
Keywords
Field
DocType
CMOS integrated circuits,OFDM modulation,capacitors,radio transmitters,transformers,CMOS IQ digital Doherty transmitter,CMOS technology,Doherty-like configuration,RFBW multitone OFDM signal,RMS output power,current 176 mA,differential four-phase DDRM,digital IQ transmitter,direct digital RF modulators,drain efficiency,efficiency 18 percent,frequency 2 GHz,modulated tuning capacitors,onchip transformers,size 90 nm,voltage 2.4 V
Transmitter,Transmitter power output,Capacitor,Computer science,CMOS,Electronic engineering,Electrical impedance,Electrical engineering,dBm,Electricity generation,Orthogonal frequency-division multiplexing
Conference
ISSN
ISBN
Citations 
1930-8833 E-ISBN : 978-1-4673-2211-9
978-1-4673-2211-9
5
PageRank 
References 
Authors
0.48
5
4
Name
Order
Citations
PageRank
Wagdy M. Gaber150.48
Piet Wambacq252996.10
Jan Craninckx3756181.43
Mark Ingels415726.53