Abstract | ||
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Steep sub-threshold transistors are promising candidates to replace the traditional MOSFETs for sub-threshold leakage reduction. In this paper, we explore the use of Inter-Band Tunnel Field Effect Transistors (TFETs) in SRAMs at ultra low supply voltages. The uni-directional current conducting TFETs limit the viability of 6 T SRAM cells. To overcome this limitation, 7 T SRAM designs were proposed earlier at the cost of extra silicon area. In this paper, we propose a novel 6 T SRAM design using Si-TFETs for reliable operation with low leakage at ultra low voltages. We also demonstrate that a functional 6 T TFET SRAM design with comparable stability margins and faster performances at low voltages can be realized using proposed design when compared with the 7 T TFET SRAM cell. We achieve a leakage reduction improvement of 700 X and 1600 X over traditional CMOS SRAM designs at VDD of 0.3 V and 0.5 V respectively which makes it suitable for use at ultra-low power applications. |
Year | DOI | Venue |
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2010 | 10.1109/ASPDAC.2010.5419897 | asia and south pacific design automation conference |
Keywords | Field | DocType |
CMOS memory circuits,SRAM chips,elemental semiconductors,field effect transistors,low-power electronics,silicon,tunnel transistors,CMOS SRAM designs,MOSFET,Si,inter-band tunnel field effect transistors,steep sub-threshold transistors,sub-threshold leakage reduction,tunnel FET,unidirectional current,voltage 0.3 V,voltage 0.5 V | Leakage (electronics),Stability margin,Field-effect transistor,Computer science,Voltage,CMOS,Static random-access memory,Electronic engineering,Transistor,Electrical engineering,Low-power electronics | Conference |
ISSN | ISBN | Citations |
2153-6961 | 978-1-4244-5767-0 | 26 |
PageRank | References | Authors |
3.96 | 3 | 6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Jawar Singh | 1 | 75 | 15.39 |
Ramakrishnan, K. | 2 | 48 | 4.83 |
Mookerjea, S. | 3 | 26 | 3.96 |
Suman Datta | 4 | 415 | 51.93 |
Narayanan Vijaykrishnan | 5 | 6955 | 524.60 |
D. Pradhan | 6 | 26 | 3.96 |