Paper Info
Title
+117 dbm high-efficiency CMOS power amplifiers operating at high voltage for 24 GHz radar sensor
Abstract
The authors investigated the series-bias technique suitable for designing complementary metal-oxide semiconductor (CMOS) power amplifiers using scaled-down CMOS technology. The series-bias technique effectively increased the operating voltage of two K-band amplifiers and achieved a high output power level. A two-stage series-bias amplifier showed a small signal gain of 9.5 dB, an output power of 17.7 dBm and a power-added efficiency (PAE) of 10.4 at 23 GHz. A three-stage series-bias amplifier showed a small signal gain of 17.3 dB, an output power of 17.5 dBm and a PAE of 8.8 at 23.5 GHz. The measured output power was the highest for K-band power amplifiers using common-source transistors. These amplifiers employing the series-bias technique are shown to have a highly favourable figure-of-merit compared with the results obtained from conventional amplifiers. The results will be useful for fully integrated radar sensors at microwave/millimetre-wave frequencies.
Year
DOI
Venue
2010
10.1049/iet-cds.2009.0166
Circuits, Devices & Systems, IET
Keywords
Field
DocType
CMOS analogue integrated circuits,microwave power amplifiers,radar,sensors,common-source transistors,complementary metal-oxide semiconductor,figure-of-merit,frequency 24 GHz,gain 17.3 dB,gain 9.5 dB,high-efficiency CMOS power amplifiers,microwave-millimetre-wave frequencies,radar sensor,two-stage series-bias amplifier
K band,Transistor array,CMOS,Electronic engineering,RF power amplifier,High voltage,Current sense amplifier,Electrical engineering,Mathematics,Power bandwidth,Amplifier
Journal
Volume
Issue
ISSN
4
2
1751-858X
Citations 
PageRank 
References 
0
0.34
3
Authors
2
Name
Order
Citations
PageRank
Jong-Wook Lee16611.45
Sang-Hyun Hwang221.06