Paper Info
Title
Non-volatile memory circuits for FIMS and TAS writing techniques on magnetic tunnelling junctions
Abstract
This paper presents, and compares, two circuits based on Magnetic RAM (MRAM) technology for use as configuration memory elements of coarse grained reconfigurable arrays. MRAM based memory cells provide non-volatility with cell areas and access speeds comparable to those of conventional static memories. Two scaled-down prototypes of a coarse grain reconfigurable array that employs MRAM based elements as configuration memory have been designed, manufactured and tested. One prototype employs Field Induced Magnetic Switching (FIMS) writing technique while the other prototype employs Thermally Assisted Switching (TAS) writing technique. Both prototypes are compared qualitatively and quantitatively and conclusions are drawn.
Year
DOI
Venue
2012
10.1109/ICECS.2012.6463536
Electronics, Circuits and Systems
Keywords
Field
DocType
MRAM devices,SRAM chips,magnetic switching,magnetic tunnelling,FIMS writing techniques,MRAM based elements,MRAM based memory cells,MRAM technology,TAS writing techniques,access speeds,coarse grain reconfigurable array,coarse grained reconfigurable arrays,configuration memory elements,conventional static memory,field induced magnetic switching writing technique,magnetic RAM technology,magnetic tunnelling junctions,nonvolatile memory circuits,scaled-down prototypes,thermally assisted switching writing technique
Reconfigurable array,Computer science,Electronic engineering,Magnetoresistive random-access memory,Non-volatile memory,Electronic circuit,Electrical engineering,Magnetic switching,Magnetic tunnelling
Conference
ISBN
Citations 
PageRank 
978-1-4673-1259-2
1
0.40
References 
Authors
4
4
Name
Order
Citations
PageRank
Victor Silva152.24
Mario P. Vestias261.63
Horácio C. Neto317224.25
Jorge R. Fernandes415434.16