Name
Abstract | ||
|---|---|---|
In this paper the design of a robust to Process, Voltage and Temperature (PVT) variations fully-differential voltage amplifier is presented. The proposed circuit is implemented in a standard digital CMOS technology as 45 nm-1 V Silicon-on-Insulator. The robustness of the circuit is achieved through the use of a novel input stage, which combines two single-ended differential pairs to obtain a fully-differential behaviour. In addition, compound transistors are used in order to increase the output impedance of the devices and hence the gain. As a result, a low-frequency gain of 60 dB is achieved, with a maximum variation of ±4.2 dB for all process corners and temperatures between -40 °C and 120 °C, and supply voltages between 0.9 V and 1.1 V; moreover transient behaviour and PSRR present a robust performance too. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/LASCAS.2013.6519005 | Circuits and Systems |
Keywords | DocType | ISSN |
cmos analogue integrated circuits,differential amplifiers,silicon-on-insulator,psrr,pvt fully-differential amplifier,pvt variations,soi-cmos technology,si,gain 60 db,low-frequency gain,output impedance,process voltage and temperature variations,size 45 nm,standard digital cmos technology,temperature 40 degc to 120 degc,voltage 0.9 v to 1.1 v,pvt robustness,voltage amplifier,fully-differential,silicon on insulator | Conference | 2330-9954 |
ISBN | Citations | PageRank |
978-1-4673-4897-3 | 0 | 0.34 |
References | Authors | |
2 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Amaya, A. | 1 | 0 | 2.37 |
| Villota, F. | 2 | 0 | 0.34 |
| Espinosa, G. | 3 | 0 | 0.34 |