Name
Abstract | ||
|---|---|---|
In this paper a dual band balun low-noise-amplifier (LNA) for impulse-radio ultra wide band (IR-UWB) applications is proposed. It exploits a common-gate (CG) stage in parallel to a common-source (CS) featuring 18 dB maximum gain, <;4 dB noise figure and 4 dBm in-band third-order intermodulation intercept (IIP3). A double-peak single notch input network with a dual-band LC load is used for input matching and for WLAN (5-6 GHz) out-of-band interferers suppression, resulting in 16 out-of-band IIP3. This allows to remove the 5-6GHz WLAN dedicated filtering at the antenna reducing costs. The dual-band balun-LNA has been designed in 65nm CMOS technology, 1.2V supply and 9mA current consumption. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/ICICDT.2013.6563329 | ICICDT |
Keywords | Field | DocType |
cmos integrated circuits,baluns,interference suppression,intermodulation,low noise amplifiers,microwave antennas,multifrequency antennas,radiofrequency interference,ultra wideband communication,wireless lan,16 out-of-band iip3,cg stage,cmos,cs,ir-uwb applications,wlan blockers,wlan out-of-band interferers suppression,antenna cost reduction,common-gate stage,common-source,current 9 ma,double-peak single notch input network,dual band balun low-noise-amplifier,dual-band lc load,dual-band balun lna,frequency 5 ghz to 6 ghz,impulse-radio ultra wide band applications,in-band third-order intermodulation intercept,size 65 nm,voltage 1.2 v,impedance,common source,impedance matching,radio frequency,gain,dual band | Balun,Noise figure,Impedance matching,Electronic engineering,Radio frequency,CMOS,Ultra-wideband,Engineering,Intermodulation,Electrical engineering,Multi-band device | Conference |
ISBN | Citations | PageRank |
978-1-4673-4741-9 | 3 | 0.48 |
References | Authors | |
5 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| V. Chironi | 1 | 15 | 3.96 |
| D'Amico, S. | 2 | 3 | 0.48 |
| De Matteis, M. | 3 | 54 | 16.15 |
| Baschirotto, A. | 4 | 5 | 1.93 |