Name
Title | ||
|---|---|---|
CMOS-MEMS technology with front-end surface etching of sacrificial SiO2 dedicated for acoustic devices |
Abstract | ||
|---|---|---|
In this work, we will present results showing a feasibility of a MEMS microphone, based on AMS 0.35 μm CMOS standard process, with only one step of a sacrificial SiO2 maskless etching on the substrate front-side. The microphone design, modeling and simulated performance will be studied. Fabrication of test structures obtained with a SiO2 etching will be shown as well as characterizations of these test structures. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/IWASI.2013.6576073 | Advances in Sensors and Interfaces |
Keywords | DocType | ISBN |
CMOS integrated circuits,etching,microfabrication,micromechanical devices,microphones,silicon compounds,AMS CMOS standard process,CMOS-MEMS technology,MEMS microphone design,SiO2,acoustic devices,front-end surface etching,maskless etching,size 0.35 mum,substrate front-side,Acoustic MEMS,CMOS-MEMS Technology,Front-end Surface Etching | Conference | 978-1-4799-0039-8 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Esteves, J. | 1 | 0 | 0.34 |
| L. Rufer | 2 | 35 | 6.75 |
| Skandar BASROUR | 3 | 17 | 5.56 |
| Ekeom, D. | 4 | 0 | 0.34 |