Title
A 2.5GHz 32nm 0.35mm2 3.5dB NF −5dBm P1dB fully differential CMOS push-pull LNA with integrated 34dBm T/R switch and ESD protection
Abstract
In this paper, a 2.5GHz fully differential tuned LNA with integrated T/R switch is designed in a High-K metal gate 32nm digital CMOS process, and packaged in an SoC-compatible flip-chip package. Reliability constraints of the package severely limit the ability to depopulate soldering bumps, and RF components must be designed taking the bump location into account. The LNA achieves a 3.5dB NF, -5dBm P1dB at 2.5GHz while drawing 11 mA from a 1.8V supply. LNA performance is enabled by use of a push-pull topology that exploits the equal strength of p and n transistors to improve linearity, use of nested coupled inductors (NCI) for low-noise input matching and to reduce area. The T/R switch handles 34dBm of power with an insertion loss of 1.1dB at 2.5GHz. T/R switch performance is enabled by reuse of LNA gate inductor to enable low RX mode loss, use of remote body-contact ed TX switch with high power handling and ESD protection for a transformer coupled PA.
Year
DOI
Venue
2011
10.1109/ISSCC.2011.5746217
Solid-State Circuits Conference Digest of Technical Papers
Keywords
Field
DocType
CMOS integrated circuits,circuit reliability,differential amplifiers,flip-chip devices,low noise amplifiers,network topology,system-on-chip,transistors,CMOS push-pull LNA,ESD protection,SoC-compatible flip-chip package,T/R switch,digital CMOS process,frequency 2.5 GHz,nested coupled inductors,push-pull topology,reliability,size 32 nm,transistors
Logic gate,System on a chip,Computer science,Circuit reliability,ISM band,Inductor,Electronic engineering,CMOS,Insertion loss,Transistor,Electrical engineering
Conference
ISSN
ISBN
Citations 
0193-6530
978-1-61284-303-2
8
PageRank 
References 
Authors
1.69
2
4
Name
Order
Citations
PageRank
Chang-Tsung Fu1375.92
Hasnain Lakdawala210819.50
Stewart S. Taylor38216.72
K. Soumyanath420527.70