Name
Abstract | ||
|---|---|---|
We present in this paper a computationally efficient full-band approach to simulate the current characteristics of p-type ultra-scaled, circular, gate-all-around nanowire field-effect transistors (FETs). It is based on an extension of the semiclassical top-of-the-barrier model where tunneling is accounted for through the Wentzel-Kramers-Brillouin approximation and Poisson equation is reduced to a one-dimensional (1-D) problem. As compared to 3-D, full-band, and atomistic simulations, the computational times significantly decrease while still offering accurate device characteristics. The properties of p-type Si nanowire FETs with different crystal orientations, diameters (4-8 nm), and gate lengths (5-15 nm) are calculated as an illustration. It is found that the performance advantage of 〈110〉-oriented devices at relatively long gate lengths - thanks to a lighter transport effective mass than 〈111〉 and 〈100〉 - vanishes at short gate lengths due to an increase of the source-to-drain tunneling rate. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/ESSDERC.2013.6818823 | Solid-State Device Research Conference |
Keywords | Field | DocType |
Poisson equation,WKB calculations,elemental semiconductors,field effect transistors,nanowires,silicon,tunnelling,Poisson equation,Si,Wentzel-Kramers-Brillouin approximation,gate-all-around nanowire field-effect transistors,p-type Si nanowire FET,p-type ultrascaled silicon nanowire transistors,semiclassical top-of-the-barrier model,size 4 nm to 8 nm,size 5 nm to 15 nm,source-to-drain tunneling rate,transport effective mass | Quantum tunnelling,Logic gate,Poisson's equation,Effective mass (solid-state physics),Electronic engineering,Transistor,Materials science,Silicon,Nanowire,AND gate | Conference |
ISSN | Citations | PageRank |
1930-8876 | 0 | 0.34 |
References | Authors | |
0 | 2 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Aron Szabo | 1 | 0 | 0.34 |
| Mathieu Luisier | 2 | 56 | 8.55 |