Name
Abstract | ||
|---|---|---|
Silicon-rich oxide (SiOx, 0<;x<;2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 °C, 900 °C, 1000 °C and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.5562/cca1969 | Opatija |
Keywords | Field | DocType |
raman spectra,amorphous state,annealing,chemical vapour deposition,nanostructured materials,pyrolysis,separation,silicon compounds,thin films,lpcvd method,raman spectroscopy,siox,amorphous matrix,low pressure chemical vapor deposition,nanosized crystalline silicon particles,oxygen,reactant gasses,silane,silicon-rich oxides,temperature 1000 degc,temperature 1100 degc,temperature 570 degc,temperature 800 degc,temperature 900 degc,thermal decomposition,silicon,lpcvd | Inorganic chemistry,Chemistry,Thin film,Thermal decomposition,Silicon,Chemical vapor deposition | Conference |
Volume | Issue | ISSN |
85 | 1 | 0011-1643 |
ISBN | Citations | PageRank |
978-1-4577-0996-8 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Davor Ristic | 1 | 0 | 3.04 |
| Mile Ivanda | 2 | 2 | 6.32 |
| Kresimir Furic | 3 | 1 | 1.30 |
| Alessandro Chiasera | 4 | 0 | 1.01 |
| enrico moser | 5 | 0 | 0.34 |
| maurizio ferrari | 6 | 0 | 1.01 |