Paper Info
Title
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon
Abstract
We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer.
Year
DOI
Venue
2015
10.1109/TR.2014.2371054
Reliability, IEEE Transactions
Keywords
Field
DocType
cmos integrated circuits,mos capacitors,elemental semiconductors,permittivity,semiconductor device breakdown,silicon,statistical analysis,cmos compatible process,moscap,bulk mono-crystalline silicon substrate,dielectric breakdown,dielectric constant insulator,electrical analysis,flexible bulk mono-crystalline silicon,lifetime projection,metal gate metal oxide semiconductor capacitors,ramping voltage breakdown,silicon wafer,size 25 mum,flexible,weibull distribution,metal oxide semiconductor capacitors,time dependent dielectric breakdown,voltage breakdown,metals,stress,capacitance
Capacitor,Dielectric strength,Breakdown voltage,High-κ dielectric,Crystalline silicon,Electrical engineering,Optoelectronics,Metal gate,Semiconductor,Reliability engineering,Mathematics,Silicon
Journal
Volume
Issue
ISSN
64
2
0018-9529
Citations 
PageRank 
References 
1
0.37
2
Authors
5
Name
Order
Citations
PageRank
Mohamed T. Ghoneim152.20
Jhonathan P. Rojas211.04
C. Young393.91
Gennadi Bersuker4146.20
Muhammad Mustafa Hussain5386.30