Name
Title | ||
|---|---|---|
Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks |
Abstract | ||
|---|---|---|
Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO2 dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/IRPS.2015.7112689 | IRPS |
Keywords | DocType | ISSN |
iii-v semiconductors,aluminium compounds,dielectric materials,gallium compounds,high electron mobility transistors,semiconductor device reliability,silicon compounds,wide band gap semiconductors,ald gate dielectric,sio2-algan,barrier layers,blocking-state voltage stress,lateral hemt reliabiity,parametric shifts,post-stress recovery,recessed-gate devices,recessed-gate geometry,recovery transients,temperature-invariant emission process,trapping characteristics,hemt,current collapse,defects,gallium nitride,power electronics,reliability,trapped charge | Conference | 1541-7026 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. P. King | 1 | 0 | 0.34 |
| J. R. Dickerson | 2 | 0 | 0.34 |
| Soura Dasgupta | 3 | 679 | 96.96 |
| Matthew J. Marinella | 4 | 25 | 7.43 |
| R. J. Kaplar | 5 | 0 | 0.34 |
| Daniel Piedra | 6 | 0 | 0.34 |
| M. Sun | 7 | 0 | 0.34 |
| Tomas Palacios | 8 | 1 | 2.71 |