Title
Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements
Abstract
In this paper, we use low frequency noise (LFN) measurements to study the resistance drift of the low resistance (SET) and the high resistance (RESET) states Ge-rich based PCM devices. We confirm that the structural relaxation of the amorphous phase, which is at the origin of the drift of the RESET state, also results in an increase of the normalized noise. We then highlight for the first time the decrease of the normalized noise (SI/I2) of the SET states obtained with different programming procedures, which originates from the structural relaxation of the amorphous-like grain boundaries (GB). This demonstrates the major electrostatic influence of the interfacial defects on the LFN of the SET states. The results are successfully interpreted in the framework of recently published models which give account for the drift of the SET and RESET states.
Year
DOI
Venue
2015
10.1109/IRPS.2015.7112807
Reliability Physics Symposium
Keywords
Field
DocType
amorphous semiconductors,germanium alloys,grain boundaries,phase change memories,gb,ge,lfn,reset state drift analysis,set state drift analysis,amorphous phase,amorphous-like grain boundary,electrostatsics,germanium-rich based pcm devices,high resistance states,interfacial defects,low frequency noise measurements,low resistance state,normalized noise,resistance drift,structural relaxation,ge-rich alloys,ge2sb2te5 (gst),phase-change memories,low frequency noise,reliability,noise,films,programming,resistance,noise measurement
Normalization (statistics),Noise measurement,Infrasound,Phase change,Electronic engineering,Engineering,Amorphous semiconductors,Grain boundary,Resistance drift,Amorphous solid
Conference
ISSN
Citations 
PageRank 
1541-7026
0
0.34
References 
Authors
0
8
Name
Order
Citations
PageRank
S. Souiki-Figuigui100.34
Veronique Sousa200.34
Gérard Ghibaudo35134.87
Gabriele Navarro411.79
M. Coue500.34
L. Perniola643.31
Paola Zuliani7256.59
R. Annunziata820.83