Name
Abstract | ||
|---|---|---|
Using the heavy-ion micro-probe facility at GSI in Darmstadt, individual heavy ions can be targeted at specific locations on a die. Circuits to measure SEUs in flip-flops and RAMs, SETs in combinatorial logic and glitches in PLLs were developed and tested. Detailed results for a study of the 130 nm ProASIC3L FPGA tested under Au (94 MeV/mg /cm2) and Ti (19 MeV/mg / cm2) ions are presented. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/IRPS.2015.7112826 | Reliability Physics Symposium |
Keywords | Field | DocType |
application specific integrated circuits,field programmable gate arrays,flip-flops,integrated circuit testing,phase locked loops,radiation hardening (electronics),random-access storage,darmstadt,fpga ser sensitivty,gsi,pll,proasic3l fpga testing,ram,set,combinatorial logic,flip-flop,heavy ion microbeam analysis,size 130 nm,fpga,phase loced loop (pll),micro-probe,single event transient (set),single event upset (seu),gold,ions | Glitch,Phase-locked loop,Heavy ion,Field-programmable gate array,Combinational logic,Electronic engineering,Microbeam,Engineering,Electronic circuit,Ion | Conference |
ISSN | Citations | PageRank |
1541-7026 | 0 | 0.34 |
References | Authors | |
0 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Adrian Evans | 1 | 0 | 0.34 |
| Alexandrescu, D. | 2 | 0 | 0.34 |
| Veronique Ferlet-Cavrois | 3 | 0 | 0.34 |
| Kay-Obbe Voss | 4 | 0 | 0.68 |