Title
50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform
Abstract
We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF. A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.
Year
Venue
Keywords
2015
Optical Fiber Communications Conference and Exhibition
extinction ratio,modulation,decision support systems,silicon,electric fields,absorption,insertion loss
DocType
Citations 
PageRank 
Conference
0
0.34
References 
Authors
1
11