Name
Abstract | ||
|---|---|---|
We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280H à 480V pixels, 4.2-¿m effective pixel pitch along with 45° direction was designed and fabricated through 0.18-¿m 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-¿V/- high conversion gain and about 102-dB dynamic range (DR) performance in one exposure. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1109/ASPDAC.2010.5419870 | Design Automation Conference |
Keywords | Field | DocType |
CMOS image sensors,photodiodes,2-poly 3-metal CMOS technology,LOFIC architecture,checkered white-RGB color LOFIC CMOS image sensor,lateral overflow integration capacitor,pinned photodiode process | Dot pitch,Dynamic range,Image sensor,Computer science,Electronic engineering,CMOS,Pixel,RGB color model,Optical format,Photodiode | Conference |
ISSN | ISBN | Citations |
2153-6961 | 978-1-4244-5767-0 | 0 |
PageRank | References | Authors |
0.34 | 1 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shun Kawada | 1 | 0 | 0.34 |
| Shin Sakai | 2 | 2 | 1.71 |
| Yoshiaki Tashiro | 3 | 0 | 1.01 |
| Shigetoshi Sugawa | 4 | 0 | 0.34 |