Name
Abstract | ||
|---|---|---|
A 2.2 GHz fully integrated SiGe-BiCMOS frequency synthesizer embedding a low-noise VCO and targetting infrastructure applications is presented. A differential Colpitts VCO forms the core of the synthesizer. An initial open-loop calibration which stores the center frequencies of all VCO sub-bands in a RAM obviates the need for incremental calibration. The synthesizer has multiple out-of-loop dividers to synthesize frequencies less than the VCO frequency. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1109/ISSCC.2010.5433944 | Solid-State Circuits Conference Digest of Technical Papers |
Keywords | Field | DocType |
Ge-Si alloys,frequency synthesizers,voltage-controlled oscillators,BiCMOS frequency synthesizer,VCO frequency,complementary metal-oxide-semiconductor,differential Colpitts VCO,frequency 2.2 GHz,low noise VCO,low noise frequency synthesizer,open loop calibration,out-of-loop dividers,voltage-controlled oscillators | Switching time,Transceiver,Computer science,Phase noise,Electronic engineering,Frequency synthesizer,Voltage-controlled oscillator,Bandwidth (signal processing),Handset,Electrical engineering,Local oscillator | Conference |
ISSN | ISBN | Citations |
0193-6530 | 978-1-4244-6033-5 | 0 |
PageRank | References | Authors |
0.34 | 2 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Farahvash, S. | 1 | 0 | 0.34 |
| Roberts, W. | 2 | 0 | 0.34 |
| Easter, J. | 3 | 0 | 0.34 |
| Wei, R. | 4 | 0 | 0.34 |