Title
A new XOR-based Content Addressable Memory architecture
Abstract
In this paper we describe a Content Addressable Memory (CAM) architecture based on a new custom cell, called XORAM. The cell is composed by two main blocks: a 6T-SRAM, and a 4T-XOR logic gate. Each XORAM cell compares the input data on the bit line with the data stored in the 6T-SRAM cell. The output matching bit is obtained by performing a NOR operation between all bits of the XORAM cells storing the word. The proposed architecture is based on a fully-CMOS combinational logic, and it does nor require any precharge operation or control and timing logic. A compact full-custom layout has been designed for a memory organized in 18-bit words, to reduce both area and power consumption. Compared with a conventional selective precharge match-line technique, the proposed circuit occupies less area. Simulation results demonstrate that power consumption is reduced by a factor of 8.
Year
DOI
Venue
2012
10.1109/ICECS.2012.6463629
Electronics, Circuits and Systems
Keywords
Field
DocType
CMOS logic circuits,SRAM chips,content-addressable storage,logic gates,4T-XOR logic gate,6T-SRAM cell,CAM architecture,XOR-based content addressable memory architecture,XORAM,fully-CMOS combinational logic,timing logic
Logic gate,Computer architecture,Sequential logic,Pass transistor logic,AND-OR-Invert,Computer science,Logic optimization,Programmable logic array,Electronic engineering,Logic family,Programmable logic device
Conference
ISBN
Citations 
PageRank 
978-1-4673-1259-2
5
1.05
References 
Authors
1
4
Name
Order
Citations
PageRank
Luca Frontini151.05
Seyedruhollah Shojaii251.05
antonino stabile374.62
Valentino Liberali451.05