Paper Info
Title
Device-level voltage control scheme of MLC NAND flash memory for storage power failure recovery
Abstract
MLC NAND flash memory has been widely used as a storage device in mobile and desktop computing systems. However, MLC NAND flash memory may cause a data loss problem because the LSB-page programmed data can be lost when a power failure occurs in the middle of a MSB-page program operation. In this paper, we propose a device-level voltage control scheme in order to overcome this problem. With the theoretical feasibility of our proposed scheme, the storage controller could fully restore the LSB-page programmed data at device-level after a power failure.
Year
DOI
Venue
2013
10.1109/ICCE.2013.6487012
ICCE
Keywords
Field
DocType
nand circuits,failure analysis,flash memories,integrated circuit reliability,voltage control,lsb-page programmed data,mlc nand flash memory,msb-page program operation,data loss problem,desktop computing systems,device-level voltage control scheme,mobile computing systems,storage controller,storage device,storage power failure recovery
Nand flash memory,Control theory,Flash file system,Data loss,Voltage control,Computer science,Computer hardware,Desktop computing
Conference
ISSN
ISBN
Citations 
2158-3994
978-1-4673-1361-2
1
PageRank 
References 
Authors
0.35
4
2
Name
Order
Citations
PageRank
Sanghyuk Jung110.69
Yong Ho Song210.35