Name
Abstract | ||
|---|---|---|
In this paper we report on the application of in-situ CCVD grown bilayer graphene field effect transistors (BiLGFETs) as memory devices, grown in a Silicon-CMOS compatible fabrication process. By means of catalytic chemical vapor deposition (CCVD) the BiLGFETs are realized directly on oxidized silicon substrate without transfer. These BiLGFETs possess unipolar p-type device characteristics with a high on/off-current ratio between 1×105 and 1×107 at room temperature [1, 2]. The hysteresis of BiLGFETs depends on the cycling range of the applied backgate voltage VBG while the sub-threshold slope is uniform for varied temperatures and varied cycling ranges of the backgate voltage [3]. Based on the observed properties of BiLGFETs it is possible to use BiLGFETS as memory devices. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/DTIS.2013.6527769 | Design & Technology of Integrated Systems in Nanoscale Era |
Keywords | Field | DocType |
CMOS memory circuits,chemical vapour deposition,field effect transistors,graphene,semiconductor growth,BiLGFET,Si,backgate voltage,catalytic chemical vapor deposition,in-situ CCVD grown bilayer graphene field effect transistors,memory devices,oxidized silicon substrate,silicon-CMOS compatible fabrication process,subthreshold slope,temperature 293 K to 298 K,transfer-free grown bilayer graphene memory devices,unipolar p-type device characteristics | Graphene,Computer science,Field-effect transistor,Bilayer graphene,Hysteresis,Electronic engineering,Graphene nanoribbons,Fabrication,Silicon,Chemical vapor deposition | Conference |
ISBN | Citations | PageRank |
978-1-4673-6038-8 | 1 | 0.63 |
References | Authors | |
0 | 2 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| pia juliane wessely | 1 | 2 | 1.59 |
| Schwalke, U. | 2 | 1 | 0.63 |