Name
Abstract | ||
|---|---|---|
In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply. |
Year | Venue | Keywords |
|---|---|---|
2013 | MIXDES | cmos analogue integrated circuits,uhf amplifiers,biomedical electronics,gain control,low noise amplifiers,voltage control,cmos low-voltage lna,cmos technology,balun lna,chip area reduction,common-gate stage,common-source stage,dynamic threshold reduction technique,frequency 600 mhz,inductorless configuration,low-supply voltage operation,medical application,noise figure 2.3 db,power 4 mw,resistive load,size 130 nm,triode region,voltage 0.6 v,voltage gain control,dtmos,balun,low power,low voltage,cmos integrated circuits,noise,noise measurement,transistors,gain |
DocType | ISBN | Citations |
Conference | 978-83-63578-00-8 | 0 |
PageRank | References | Authors |
0.34 | 2 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Borrego, R. | 1 | 0 | 0.34 |
| João P. Oliveira | 2 | 37 | 4.60 |
| João Goes | 3 | 8 | 2.51 |