Name
Abstract | ||
|---|---|---|
Students often experience difficulties grasping the gap between simple square-law MOSFET models and advanced BSIM models with a large number of model parameters for modeling the many second-order short-channel effects (SCE). In this paper, a physics-based learning tool MOSFET model is presented with the aim of serving as a stepping-stone between these two models. The model is based on three model parameters in each of the two regions of strong inversion operation. The three-point model parameter extraction scheme is presented to support student learning and hands-on experience. The model is useful both for small-signal parameter calculations in the analog bias region and for calculation of large-signal currents during logic gate transients. Model accuracy is very good, a lot better than first expected, even if geometry variations have not yet been explored. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/PATMOS.2013.6662153 | Power and Timing Modeling, Optimization and Simulation |
Keywords | Field | DocType |
MOSFET,analogue integrated circuits,integrated circuit modelling,logic gates,semiconductor device models,transients,BSIM models,analog bias region,large-signal current calculation,logic gate transients,physics-based learning tool MOSFET model,small-signal parameter calculations,square-law MOSFET models,three-point model parameter extraction scheme,DIBL,MOSFET modeling,mobility roll-off,three-point model parameter extraction,velocity saturation | EKV MOSFET Model,Logic gate,Computer science,Inversion (meteorology),BSIM,Velocity saturation,Electronic engineering,MOSFET,Model parameter,Student learning | Conference |
ISSN | Citations | PageRank |
2474-5456 | 1 | 0.35 |
References | Authors | |
2 | 1 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jeppson, K. | 1 | 1 | 0.69 |