Paper Info
Title
Study of ZnO thin film deposited by PVD
Abstract
We present structural and optical properties of ZnO thin films deposited by using Pulsed Laser Deposition (PVD) technique on quartz substrates. The deposition process was carried out at various temperatures of the substrates from room temperature (RT) to 825K in order to investigate these properties of the films and their mutual influence. The structural and morphological properties of the films were investigated Atomic Force Microscopy measurements, respectively. The quality of the films was improved with an increase of the substrate temperature. Classic photoluminescence measurement allowed us to estimate band gap energy as a function of the temperature. Experimental spectra confirm high structural and linear optical quality of investigated films.
Year
DOI
Venue
2015
10.1109/ICTON.2015.7193661
Transparent Optical Networks
Keywords
DocType
ISSN
II-VI semiconductors,atomic force microscopy,energy gap,photoluminescence,pulsed laser deposition,semiconductor growth,semiconductor thin films,wide band gap semiconductors,zinc compounds,AFM,SiO2,ZnO,ZnO thin film,atomic force microscopy measurements,band gap energy,film quality,linear optical quality,morphological properties,photoluminescence measurement,pulsed laser deposition,quartz substrates,structural properties,substrate temperatures,temperature 293 K to 825 K,PVD (physical vapor deposition),atomic force microscopy (AFM),photoluminescence,zinc oxide (ZnO)
Conference
2162-7339
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
Plociennik, P.101.69
Zawadzka, A.204.39
andrzej korcala302.37