Name
Abstract | ||
|---|---|---|
A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of square 13.5dBm and square 7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860um. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1109/ESSCIRC.2008.4681880 | Proceedings of the European Solid-State Circuits Conference |
Keywords | DocType | ISSN |
front end,high voltage,low power electronics,chip,low voltage,radio frequency,radio receivers,gain,noise measurement | Conference | 1930-8833 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| m vidojkovic | 1 | 1 | 0.75 |
| Mihai A. T. Sanduleanu | 2 | 32 | 10.00 |
| Vojkan Vidojkovic | 3 | 40 | 7.56 |
| j van der tang | 4 | 0 | 0.34 |
| peter g m baltus | 5 | 0 | 0.34 |
| A. H. M. van Roermund | 6 | 77 | 16.14 |