Name
Title | ||
|---|---|---|
The advantage of silicon carbide material in designing of power bipolar junction transistors |
Abstract | ||
|---|---|---|
The use of Silicon Carbide in designing of power components made exceptional improvements by their high breakdown voltage in the off state, ultra-fast switching with a minimum loss during their turn-On and turn-Off transitions especially at high operating temperatures where silicon power devices reaching their limits of operations. This paper presents a comparative study, through numerical simulation using the finite element method, between a 4H-SiC power bipolar junction transistor and a Silicon power bipolar junction transistor having the same breakdown voltage, 3KV, to highlight the benefits of Silicon Carbide material in their designing. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/SSD.2015.7348149 | 2015 IEEE 12th International Multi-Conference on Systems, Signals & Devices (SSD15) |
Keywords | DocType | Citations |
4H-SiC,Numerical Simulation,Power BJT | Conference | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| mehrez oueslati | 1 | 0 | 0.34 |
| Hatem Garrab | 2 | 0 | 1.01 |
| Atef Jedidi | 3 | 0 | 1.01 |
| Kamel Besbes | 4 | 44 | 15.41 |