Name
Abstract | ||
|---|---|---|
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz f/sub /spl tau// and 490 GHz f/sub max/ DHBT, 172-GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power ga... |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1109/JSSC.2005.854609 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Circuit synthesis,Silicon germanium,Germanium silicon alloys,Indium phosphide,Power amplifiers,Electrons,Heterojunction bipolar transistors,DH-HEMTs,Power generation,Frequency conversion | Journal | 40 |
Issue | ISSN | Citations |
10 | 0018-9200 | 0 |
PageRank | References | Authors |
0.34 | 0 | 16 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mark J. W. Rodwell | 1 | 223 | 29.72 |
| Zach Griffith | 2 | 23 | 5.45 |
| d s scott | 3 | 0 | 0.34 |
| yong wei | 4 | 0 | 0.34 |
| Yingfei Dong | 5 | 210 | 30.46 |
| Vamsi Paidi | 6 | 2 | 1.21 |
| M. Dahlstrom | 7 | 4 | 2.13 |
| Navin Parthasarathy | 8 | 2 | 1.21 |
| c kadow | 9 | 0 | 0.34 |
| m urteaga | 10 | 0 | 0.34 |
| Richard Pierson | 11 | 2 | 1.55 |
| Petra Rowell | 12 | 11 | 2.67 |
| suk lee | 13 | 0 | 0.34 |
| n b nguyen | 14 | 0 | 0.34 |
| chanh nguyen | 15 | 0 | 0.34 |
| Bobby Brar | 16 | 2 | 1.21 |