Abstract | ||
---|---|---|
A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper. The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one. Using pixel level sample-and-hold circuit, the KTC noise on FD node can be effectively cancelled by correlated double sampling operation. The in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size. A high speed 1000 fps 256 × 256 CMOS image sensor based on the pixel is implemented in 0.18 μm CMOS process. The chip active area is 5 mm × 7 mm with a pixel size of 14 μm × 14 μm. The developed sensor achieves a read noise level as low as 14.8e- while attaining a high fill factor of 40%. The full well capacity can contain 30840e- and the resulting signal dynamic range is 66 dB. |
Year | DOI | Venue |
---|---|---|
2014 | 10.1007/s11432-013-4889-3 | SCIENCE CHINA Information Sciences |
Keywords | DocType | Volume |
global shutter, CDS, low noise, fill factor, high speed image sensor | Journal | 57 |
Issue | ISSN | Citations |
4 | 1869-1919 | 7 |
PageRank | References | Authors |
0.68 | 4 | 6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Yangfan Zhou | 1 | 146 | 7.98 |
Zhongxiang Cao | 2 | 35 | 4.48 |
Qi Qin | 3 | 23 | 3.62 |
Quanliang Li | 4 | 12 | 2.39 |
shi cong | 5 | 7 | 0.68 |
Nanjian Wu | 6 | 22 | 8.39 |