Name
Abstract | ||
|---|---|---|
This paper presents a SiC JFET model comprising static, dynamic and thermal features built from SPICE Analog Behavioral Modeling (ABM) controlled sources. The model is parameterized in such a way that data sheet information is enough to set it to work. The model complexity is not very high and allows for reasonably long simulation times to cope with the rather slow self heating process and still maintain enough accuracy for practical purposes. |
Year | Venue | Keywords |
|---|---|---|
2013 | MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013 | SiC JFET,ABM,self heating,carrier mobility,voltage controlled capacitance,RC thermal model |
Field | DocType | Citations |
Wide-bandgap semiconductor,Self heating,Parameterized complexity,JFET,Thermal,Spice,Computer science,Behavioral modeling,Electronic engineering,Electrical engineering,Model complexity | Conference | 0 |
PageRank | References | Authors |
0.34 | 1 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| f n masana | 1 | 0 | 0.34 |
| Javier Chavarria | 2 | 38 | 3.42 |
| Domingo Biel | 3 | 85 | 18.88 |
| Alberto Poveda | 4 | 49 | 15.30 |
| Francesc Guinjoan | 5 | 84 | 20.97 |
| Eduard Alarcón | 6 | 391 | 64.43 |