Title
A QVGA-size CMOS time-of-flight range image sensor with background light charge draining structure
Abstract
3-D imaging systems can be used in a variety of applications such as in automobile, medicine, robot vision systems, security and so on. Recently many kinds of range finding methods have been proposed for 3-D imaging systems. This paper presents a new type of CMOS range image sensor based on the Time-of-Flight (TOF) principle with a spatial resolution of 336 x 252 (QVGA) and pixels of 15 x 15 mu m(2) size. A pixel structure of the sensor consists of single layer polysilicon gates on thick field oxide and has a function of background light induced charge reduction. The chip was fabricated in a 0.35 mu m standard CMOS process with two poly and three metal layers. The presented sensor achieves a minimum range resolution of 2.8cm at framerate of 30fps and the resolution is improved to 4.2mm for 10 frames averaging, which corresponds to 3fps.
Year
DOI
Venue
2006
10.1117/12.642022
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
Keywords
Field
DocType
Time-of-Flight,3-D image,charge draining structure,QVGA,near-infrared LED
Image sensor,Electrostatic induction,Stereoscopy,Optics,Chip,CMOS,Pixel,Time of flight,Image resolution,Materials science
Conference
Volume
ISSN
Citations 
6056
0277-786X
2
PageRank 
References 
Authors
0.42
0
6
Name
Order
Citations
PageRank
takeo ushinaga120.42
Izhal Abdul Halin292.87
tomonari sawada320.42
Shoji Kawahito427067.13
Mitsuru Homma531.49
yasunari maeda620.42