Name
Title | ||
|---|---|---|
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology |
Abstract | ||
|---|---|---|
The purpose of this paper is to analyze the ESD device electro-thermal behavior of BIMOS transistors integrated in ultrathin silicon film for 28 nm FDSOI UTBB high-k metal gate technology. This evaluation is based on 3D TCAD simulations with classical physical models using Average Current Slope (ACS) method and quasi-static DC stress (Average Voltage Slope (AVS) method). We show how the series resistance and the thermal resistance impact the average and peak temperatures in these devices. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/ICICDT.2015.7165913 | 2015 International Conference on IC Design & Technology (ICICDT) |
Keywords | Field | DocType |
BIMOS transistor,ESD protection,FDSOI,CMOS | Thermal,Voltage,CMOS,Electronic engineering,Equivalent series resistance,Engineering,Transistor,Metal gate,Silicon,Thermal resistance | Conference |
ISSN | Citations | PageRank |
2381-3555 | 0 | 0.34 |
References | Authors | |
0 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| s athanasiou | 1 | 0 | 0.68 |
| Sorin Cristoloveanu | 2 | 3 | 6.73 |
| Philippe Galy | 3 | 17 | 12.44 |