Name
Abstract | ||
|---|---|---|
This paper presents a low-voltage low-power monolithic complementary metal-oxide-semiconductor (CMOS) micro-electromechanical-system (MEMS) accelerometer design. This design utilizes low-voltage design techniques without using low-threshold devices or internal supply voltage boosting. The accelerometer, designed in the 0.18-mu m CMOS MEMS process, contains the micro-mechanical structure, readout circuits, and a 16-bit delta-sigma analog-to-digital converter (Delta Sigma ADC). It occupies an area of only 0.8 x 1 mm(2) and draws 0.33 mA of current from a 0.6-V supply. The simulated sensitivity is 3000 LSB/g and the nonlinearity is 0.78% within the +/- 6 g sensing range. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/ICCE-TW.2015.7216989 | 2015 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS - TAIWAN (ICCE-TW) |
Keywords | DocType | Citations |
accelerometers,sensitivity,cmos integrated circuits,logic gates,fluctuations | Conference | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| pochang wu | 1 | 0 | 1.35 |
| Bin-Da Liu | 2 | 12 | 3.39 |
| chihyuan yeh | 3 | 0 | 0.68 |
| sheghsiang tseng | 4 | 0 | 0.34 |
| Hann-Huei Tsai | 5 | 21 | 9.22 |
| Ying-zong Juang | 6 | 38 | 13.94 |