Paper Info
Title
40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory
Abstract
This paper presents a 3-V-only 64-Mb 4-level-cell (2-b/cell) NOR-type channel-hot-electron (CHE) programmed flash memory fabricated in 0.18-/spl mu/m shallow-trench isolation CMOS technology. The device (die size 40 mm/sup 2/) is organized in 64 1-Mb sectors. Hierarchical column and row decoding ensures complete isolation between different sectors during any operation, thereby increasing device re...
Year
DOI
Venue
2000
10.1109/4.881212
IEEE Journal of Solid-State Circuits
Keywords
DocType
Volume
Channel hot electron injection,Flash memory,CMOS technology,Isolation technology,Voltage,Decoding,Throughput,Parallel programming,Error correction codes,Fabrication
Journal
35
Issue
ISSN
Citations 
11
0018-9200
17
PageRank 
References 
Authors
8.25
5
19
Name
Order
Citations
PageRank
G. Torelli19430.34
Osama Khouri24114.44
ANGELO VISCONTI310518.12
A. Modelli45819.16
A. Grossi5178.25
R. Bez62311.59
A. Pierin7178.25
C. Golla8178.25
I. Motta9178.25
marco scotti103911.10
A. Manstretta115818.83
M. Picca12178.25
A. Sacco13178.25
S. Mognoni14178.25
M. Zammattio15178.25
E. Yero16178.25
S. Commodaro17178.25
R. Micheloni182610.36
G. Campardo192910.33