Paper Info
Title
Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics
Abstract
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.
Year
DOI
Venue
2016
10.3390/electronics4030424
ELECTRONICS
Keywords
Field
DocType
flexible electronics,silicon,nonvolatile memory,ferroelectric,memristor,resistive,flash,phase change memory,random access memory (RAM),transistor,CMOS,inorganic,reliability
Sense amplifier,Semiconductor memory,Reading (computer),Non-volatile random-access memory,Computer data storage,Electronic engineering,Non-volatile memory,Engineering,Computer memory,Embedded system,Memory refresh
Journal
Volume
Issue
Citations 
4
3
2
PageRank 
References 
Authors
0.64
20
2
Name
Order
Citations
PageRank
Mohamed T. Ghoneim152.20
Muhammad Mustafa Hussain2386.30